A2T26H165-24S: 2496-2690 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-4L2L Package Image

NI-780S-4L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.5
  • P1dB (Typ) (W)
    141
  • P3dB (Typ) (dBm)
    52.8
  • P3dB (Typ) (W)
    191
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    32.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.7 @ 2496
  • Efficiency (Typ) (%)
    45.4
  • Thermal Resistance (Spec) (℃/W)
    0.45
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.