A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    54
  • P3dB (Typ) (W)
    251
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    50.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.3 @ 2635
  • Efficiency (Typ) (%)
    60.9
  • Thermal Resistance (Spec) (℃/W)
    1
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

2600 MHz

Typical Doherty single-carrier W-CDMA characterization performance: VDD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2575 MHz14.361.97.2–29.1
2605 MHz14.361.77.1–29.5
2635 MHz14.360.96.8–30.4