MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2500
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    47.3
  • P1dB (Typ) (W)
    54
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    14.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    15.0 @ 2620
  • Efficiency (Typ) (%)
    36.9
  • Thermal Resistance (Spec) (℃/W)
    0.88
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2570-2620 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2570 MHz15.439.16.8–33.6
2595 MHz15.238.26.8–36.0
2620 MHz15.036.96.8–40.0
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 83 Watts CW