A3G26H501W17S: A3G26H501W17S 2496-2690 MHz, 56 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4S2S

NI-780S-4S2S

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57
  • P3dB (Typ) (W)
    500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    56.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.5 @ 2590
  • Efficiency (Typ) (%)
    45.1
  • Thermal Resistance (Spec) (℃/W)
    0.9
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
P3dB
(dBm) (2)
ACPR
(dBc)
2496 MHz14.046.356.6–35.4
2590 MHz14.545.157.1–36.6
2690 MHz14.447.456.0–33.2
1. All data measured in fixture with device soldered to heatsink.
2. Data measured at pulsed CW, 10 µsec(on), 10% duty cycle.