A2V07H400-04N: 595-851 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-4L Package Image

OM-780-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    595
  • Frequency (Max) (MHz)
    851
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57.3
  • P3dB (Typ) (W)
    537
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    107.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.9 @ 623
  • Efficiency (Typ) (%)
    59.4
  • Thermal Resistance (Spec) (℃/W)
    0.35
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.3 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
595 MHz19.458.46.8–29.8
623 MHz19.959.47.1–30.1
652 MHz19.857.27.1–32.2