A2V09H400-04N: 720-960 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-4L

OM-780-4L

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57.5
  • P3dB (Typ) (W)
    562
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    107.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 780
  • Efficiency (Typ) (%)
    55.8
  • Thermal Resistance (Spec) (℃/W)
    0.5
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 688 mA, VGSB = 0.6 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
733 MHz17.556.37.2–31.3
780 MHz18.055.87.2–36.4
821 MHz17.455.66.9–35.0