A2V09H300-04N: 720-960 MHz, 79 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-4L Package Image

OM-780-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    53.5
  • P1dB (Typ) (W)
    223
  • P3dB (Typ) (dBm)
    56
  • P3dB (Typ) (W)
    400
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    79.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.7 @ 940
  • Efficiency (Typ) (%)
    55.9
  • Thermal Resistance (Spec) (℃/W)
    0.34
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz19.855.17.2–32.7
940 MHz19.755.97.1–33.4
960 MHz19.556.16.7–33.9

800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.0 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz18.455.07.6–25.0
806 MHz18.956.08.0–28.0
821 MHz18.156.18.0–32.0