MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor

Overview

Features

OM-780-4 Package Image

OM-780-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    52.9
  • P1dB (Typ) (W)
    193
  • P3dB (Typ) (dBm)
    54.6
  • P3dB (Typ) (W)
    290
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    63.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.7 @ 960
  • Efficiency (Typ) (%)
    47.4
  • Thermal Resistance (Spec) (℃/W)
    0.53
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, IDQA = 750 mA, VGSB = 1.2 Vdc, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz16.546.26.2–31.3
940 MHz16.947.76.0–32.6
960 MHz16.747.45.8–34.4
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 253 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 3 dB Compression Point 290 Watts