MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview

Features

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    26
  • P1dB (Typ) (dBm)
    47.8
  • P1dB (Typ) (W)
    60
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    60.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    15.0 @ 1990
  • Efficiency (Typ) (%)
    50
  • Thermal Resistance (Spec) (℃/W)
    0.81
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.