A2G22S190-01S: 1800-2200 MHz, 36 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-400S-2S Package Image

NI-400S-2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    52.6
  • P3dB (Typ) (W)
    182
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    36.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.5 @ 1805
  • Efficiency (Typ) (%)
    36.2
  • Thermal Resistance (Spec) (℃/W)
    1.6
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz16.536.27.1–33.8–6
1990 MHz17.337.26.9–33.2–11
2170 MHz16.838.56.7–32.6–7