A3I20X050N: 1800-2200 MHz, 6.3 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

Overview

Features

OM-400-8, OM-400G-8 Package Image

OM-400-8, OM-400G-8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    28
  • P3dB (Typ) (dBm)
    48
  • P3dB (Typ) (W)
    63
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    6.3 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    28.7 @ 1840
  • Efficiency (Typ) (%)
    39.1
  • Thermal Resistance (Spec) (℃/W)
    1.9
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 160 mA, VGS(Peaking) = 2.15 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1805 MHz 28.7 38.1 –37.1
1840 MHz 28.7 39.1 –39.7
1880 MHz 28.7 39.0 –37.5

1800–2200 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 145 mA, VGS(Peaking) = 2.20 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz 28.3 37.3 –33.5
1900 MHz 28.4 38.0 –37.7
2000 MHz 28.7 37.6 –40.9
2100 MHz 29 38.0 –39.1
2200 MHz 29.0 37.6 –34.1
1. All data measured in fixture with device soldered to heatsink.