A3G22H400-04S: 1800-2200 MHz, 79 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    56
  • P3dB (Typ) (W)
    400
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    79.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    15.4 @ 2140
  • Efficiency (Typ) (%)
    56.6
  • Thermal Resistance (Spec) (℃/W)
    0.87
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Tables

2100 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.4 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz15.456.67.1–33.1
2140 MHz15.456.67.1–34.9
2170 MHz15.456.67.1–34.9
2200 MHz15.356.57.0–34.5

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.5 Vdc, Pout = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz15.156.07.0–31.1
1840 MHz15.656.57.1–31.8
1880 MHz15.158.77.0–30.8
1. All data measured in fixture with device soldered to heatsink.