A3G18H500-04S: 1805-1880 MHz, 107 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57.3
  • P3dB (Typ) (W)
    537
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    107.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    15.4 @ 1840
  • Efficiency (Typ) (%)
    57.7
  • Thermal Resistance (Spec) (℃/W)
    0.6
  • Matching
    input impedance matching
  • Class
    C, AB
  • Die Technology
    GaN
.

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz15.358.47.1–31.9
1840 MHz15.457.77.0–33.2
1880 MHz15.457.76.7–33.8