A2T18S162W31S: 1805-1880 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS

Overview

Features

RF ISOs NI-780S-2L2LA NI-780GS-2L2LA Package Image

RF ISOs NI-780S-2L2LA NI-780GS-2L2LA Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.1
  • P1dB (Typ) (W)
    129
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    32.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    20.1 @ 1840
  • Efficiency (Typ) (%)
    33.9
  • Thermal Resistance (Spec) (℃/W)
    0.36
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.