Audio
Interfaces
Peripherals and Logic
Power Management
Sensors
RF
RFID/NFC
Security and Authentication
Wireless Connectivity
Browse all products
Product Information
Application-Specific Products
NXP Community
Design ideas, demo videos, quality answers. Connect with NXP professionals and other knowledgeable designers ready to help.
Design Resources
Software, documentation, evaluation tools. The resources to build comprehensive solutions and accelerate your time to market.
Access our design resource library
Careers at NXP
We're always looking for passionate and talented people to work with us.
Join our teamA2T18S260W12N: 1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 1805
-
- Frequency (Max) (MHz)
- 1880
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 54.5
-
- P1dB (Typ) (W)
- 280
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 56.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 18.7 @ 1880
-
- Efficiency (Typ) (%)
- 34.4
-
- Thermal Resistance (Spec) (℃/W)
- 0.23
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Table
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 18.1 | 33.1 | 6.9 | –34.7 | –15 |
| 1840 MHz | 18.5 | 33.5 | 7.0 | –35.1 | –23 |
| 1880 MHz | 18.7 | 34.4 | 6.8 | –34.4 | –12 |