A2T18S261W12N: 1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-880X-2L2L Package Image

OM-880X-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1880
  • Frequency (Max) (MHz)
    1805
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.5
  • P1dB (Typ) (W)
    280
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    56.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.2 @ 1880
  • Efficiency (Typ) (%)
    34.8
  • Thermal Resistance (Spec) (℃/W)
    0.23
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.734.27.0–35.1–15
1840 MHz18.134.17.1–35.2–13
1880 MHz18.234.87.1–34.6–10