MRF8S18120H: 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50.8
  • P1dB (Typ) (W)
    120
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    72.0 @ CW
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.2 @ 1805
  • Efficiency (Typ) (%)
    49.8
  • Thermal Resistance (Spec) (℃/W)
    0.47
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1800 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
Frequency Gps
(dB)
ηD
(%)
1805 MHz18.249.8
1840 MHz18.651.4
1880 MHz18.753.9
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 120 Watts CW

1800 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.
Frequency Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz17.941.0–64–761.6
1840 MHz18.241.9–63–761.7
1880 MHz18.343.2–61–762.0