MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-1230-8, NI-1230S-8 Package Image

NI-1230-8, NI-1230S-8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    30
  • P1dB (Typ) (dBm)
    54.1
  • P1dB (Typ) (W)
    260
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    74.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    17.9 @ 1805
  • Efficiency (Typ) (%)
    31.6
  • Thermal Resistance (Spec) (℃/W)
    0.27
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz17.931.66.0–35.0
1840 MHz17.931.96.0–36.0
1880 MHz17.932.55.9–36.0
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 260 Watts CW