A3T18H455W23S: 1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 1805
-
- Frequency (Max) (MHz)
- 1880
-
- Supply Voltage (Typ) (V)
- 30
-
- P3dB (Typ) (dBm)
- 58.4
-
- P3dB (Typ) (W)
- 685
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 87.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 17.4 @ 1840
-
- Efficiency (Typ) (%)
- 54.1
-
- Thermal Resistance (Spec) (℃/W)
- 0.14
-
- Matching
- input and output impedance matching
-
- Class
- AB, C
-
- Die Technology
- LDMOS
.
RF Performance Table
1800 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 17.2 | 53.5 | 8.0 | –28.3 |
| 1840 MHz | 17.4 | 54.1 | 8.1 | –29.4 |
| 1880 MHz | 17.1 | 53.7 | 7.9 | –31.2 |