A2T18H100-25S: 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-4L4S Package Image

NI-780S-4L4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    48.6
  • P1dB (Typ) (W)
    72
  • P3dB (Typ) (dBm)
    50.5
  • P3dB (Typ) (W)
    112
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    18.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.1 @ 1805
  • Efficiency (Typ) (%)
    50.2
  • Thermal Resistance (Spec) (℃/W)
    0.74
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 230 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 210 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.