A2T18S165-12S: 1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2L2L Package Image

NI-780S-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.7
  • P1dB (Typ) (W)
    148
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    38.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 1840
  • Efficiency (Typ) (%)
    34.3
  • Thermal Resistance (Spec) (℃/W)
    0.39
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1800 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz18.134.66.9–34.9–16
1840 MHz18.034.36.8–34.2–17
1880 MHz18.334.96.9–34.5–12

1900 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz18.132.36.9–34.4–16
1960 MHz18.632.97.0–34.4–18
1995 MHz18.734.16.9–34.2–12