A2T18S166W12S: 1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2L2L Package Image

NI-780S-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    52
  • P1dB (Typ) (W)
    158
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    38.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.1 @ 1840
  • Efficiency (Typ) (%)
    34.4
  • Thermal Resistance (Spec) (℃/W)
    0.38
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz18.035.36.9–34.5–18
1840 MHz18.134.46.8–34.7–19
1880 MHz17.634.26.7–34.3–12

1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz17.831.26.8–34.6–16
1960 MHz18.331.76.8–34.4–22
1995 MHz18.632.86.8–34.0–14