A2T18S260-12S: 1805-1995 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2L2L Package Image

NI-780S-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.1
  • P1dB (Typ) (W)
    257
  • P3dB (Typ) (dBm)
    55.1
  • P3dB (Typ) (W)
    323
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    50.0 @ Avg
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.9 @ 1805
  • Efficiency (Typ) (%)
    30.1
  • Thermal Resistance (Spec) (℃/W)
    0.36
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1800 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz18.930.17.7–35.8–17
1840 MHz19.330.07.6–36.5–19
1880 MHz19.230.37.5–36.8–9

1900 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz19.129.27.6–35.1–23
1960 MHz19.429.97.6–36.0–15
1995 MHz19.631.07.4–35.7–10