MRF8S18210WHS: 1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

The MRF8S18210WHSR3 and MRF8S18210WGHSR3 are designed for CDMA base station applications with frequencies from 1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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Features

Designed for Wide Instantaneous Bandwidth Applications.
Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MoreLess

Features

Designed for Wide Instantaneous Bandwidth Applications.
Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Data Sheets

Application Notes

NI-880XS-2, NI-880XS-2 Gull Package Image

NI-880XS-2, NI-880XS-2 Gull Package Image

NI-880XS-2, NI-880XS-2 Gull Package Image

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Key Parametrics

Frequency (Min) (MHz)

1805
Frequency (Max) (MHz)

1995
Supply Voltage (Typ) (V)

30
P1dB (Typ) (dBm)

53.2
P1dB (Typ) (W)

210
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

50.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

17.8 @ 1930
Efficiency (Typ) (%)

29.2
Thermal Resistance (Spec) (℃/W)

0.48
Matching

input and output impedance matching
Class

AB
Die Technology

LDMOS

RF Performance

1900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 30 Volts, I_DQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1930 MHz	17.8	29.2	7.0	–34.2
1960 MHz	17.8	28.2	7.0	–34.4
1995 MHz	18.1	27.6	7.1	–34.3

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW

1800 MHz

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	18.2	30.1	7.3	–35.1
1840 MHz	18.1	29.1	7.4	–35.4
1880 MHz	18.2	27.8	7.4	–35.9