MRF8S18210WHS: 1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Key Parametrics
-
- Frequency (Min) (MHz)
- 1805
-
- Frequency (Max) (MHz)
- 1995
-
- Supply Voltage (Typ) (V)
- 30
-
- P1dB (Typ) (dBm)
- 53.2
-
- P1dB (Typ) (W)
- 210
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 50.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 17.8 @ 1930
-
- Efficiency (Typ) (%)
- 29.2
-
- Thermal Resistance (Spec) (℃/W)
- 0.48
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance
1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1930 MHz | 17.8 | 29.2 | 7.0 | –34.2 |
| 1960 MHz | 17.8 | 28.2 | 7.0 | –34.4 |
| 1995 MHz | 18.1 | 27.6 | 7.1 | –34.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 18.2 | 30.1 | 7.3 | –35.1 |
| 1840 MHz | 18.1 | 29.1 | 7.4 | –35.4 |
| 1880 MHz | 18.2 | 27.8 | 7.4 | –35.9 |