AFT18S290-13S: 1805-1995 MHz 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-880XS-2L4S Image

NI-880XS-2L4S Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.2
  • P1dB (Typ) (W)
    263
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    63.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.2 @ 1960
  • Efficiency (Typ) (%)
    31.2
  • Thermal Resistance (Spec) (℃/W)
    0.42
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.