MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2025
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    48.9
  • P1dB (Typ) (W)
    78
  • P3dB (Typ) (dBm)
    51
  • P3dB (Typ) (W)
    126
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    20.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.0 @ 2025
  • Efficiency (Typ) (%)
    44.3
  • Thermal Resistance (Spec) (℃/W)
    0.88
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Tables

2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz16.044.37.8–33.5

1880-1920 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz16.243.57.6–30.8
1900 MHz16.143.47.6–32.6
1920 MHz15.842.97.6–34.6

1800 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.
Frequency Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz17.143.8–58.4–74.43.0
1840 MHz17.342.4–60.0–75.52.6
1880 MHz17.141.7–60.5–75.32.4