A2G22S251-01S: 1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-400S-2S Package Image

NI-400S-2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    52
  • P1dB (Typ) (W)
    158
  • P3dB (Typ) (dBm)
    52.9
  • P3dB (Typ) (W)
    195
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    48.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    17.7 @ 2170
  • Efficiency (Typ) (%)
    37.5
  • Thermal Resistance (Spec) (℃/W)
    1.3
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.433.57.0–34.7–14
1990 MHz17.334.37.1–35.1–11
2170 MHz17.737.56.8–33.2–12