A3G18D510-04S: 1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    55.5
  • P3dB (Typ) (W)
    355
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    56.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.0 @ 1805
  • Efficiency (Typ) (%)
    54.3
  • Thermal Resistance (Spec) (℃/W)
    0.83
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Tables

2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 16.0 54.3 8.0 –26.4
1995 MHz 16.8 52.2 7.8 –31.9
2170 MHz 15.4 53.9 7.6 –33.8