MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780H-4L, NI-780S-4L, NI-780GS-4L Package Image

NI-780H-4L, NI-780S-4L, NI-780GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1880
  • Frequency (Max) (MHz)
    2025
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.5
  • P1dB (Typ) (W)
    140
  • P3dB (Typ) (dBm)
    52.3
  • P3dB (Typ) (W)
    170
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    24.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.0 @ 1920
  • Efficiency (Typ) (%)
    43.7
  • Thermal Resistance (Spec) (℃/W)
    0.68
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 170 Watts