A3T19H455W23S: 1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Overview

Features

ACP-1230S-4L2S Package Image

ACP-1230S-4L2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1930
  • Frequency (Max) (MHz)
    1990
  • Supply Voltage (Typ) (V)
    30
  • P3dB (Typ) (dBm)
    57.3
  • P3dB (Typ) (W)
    541
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    81.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.4 @ 1990
  • Efficiency (Typ) (%)
    49.1
  • Thermal Resistance (Spec) (℃/W)
    0.14
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 540 mA, VGSB = 0.6 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz16.249.68.1–31.0
1960 MHz16.549.48.0–32.1
1990 MHz16.449.17.8–32.6