MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1930
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50.2
  • P1dB (Typ) (W)
    104
  • P3dB (Typ) (dBm)
    52.8
  • P3dB (Typ) (W)
    190
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    37.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.3 @ 1960
  • Efficiency (Typ) (%)
    47.7
  • Thermal Resistance (Spec) (℃/W)
    0.79
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Table

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz16.147.07.1–27.7
1960 MHz16.347.77.1–29.7
1995 MHz16.346.07.0–33.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 190 Watts