MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2010
  • Frequency (Max) (MHz)
    2025
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    45.4
  • P1dB (Typ) (W)
    35
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    10.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.2 @ 2025
  • Efficiency (Typ) (%)
    42.6
  • Thermal Resistance (Spec) (℃/W)
    2.11
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 32 Volts, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz18.242.67.3–34.8
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 50 Watts CW