MD7IC2251N: 2110-2170 MHz, 12 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

Overview

The MD7IC2251NR1and MD7IC2251GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110-2170 MHz. This multi-stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats.

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Features

100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

MoreLess

Features

100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

Data Sheets

Application Notes

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TO-270 WB-14, TO-270 WB-14 Gull Package Image

TO-270 WB-14, TO-270 WB-14 Gull Package Image

TO-270 WB-14, TO-270 WB-14 Gull Package Image

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Key Parametrics

Frequency (Min) (MHz)

2110
Frequency (Max) (MHz)

2170
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

46
P1dB (Typ) (W)

40
P3dB (Typ) (dBm)

47.6
P3dB (Typ) (W)

58
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

12.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

29.0 @ 2140
Efficiency (Typ) (%)

37.9
Thermal Resistance (Spec) (℃/W)

1.5
Matching

input and output impedance matching
Class

AB, C
Die Technology

LDMOS

RF Performance Table

2000 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 28 Volts, I_DQ1(A+B) = 80 mA, I_DQ2A = 260 mA, V_GS2B = 1.4 Vdc, Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	28.8	38.2	7.1	–34.6
2140 MHz	29.0	37.9	7.1	–36.2
2170 MHz	29.2	37.4	6.9	–36.1

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃ 58 Watts