MRF7S21080H: 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    49
  • P1dB (Typ) (W)
    80
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    22.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 2170
  • Efficiency (Typ) (%)
    32
  • Thermal Resistance (Spec) (℃/W)
    0.65
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.