MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    100
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    24.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.3 @ 2170
  • Efficiency (Typ) (%)
    33.4
  • Thermal Resistance (Spec) (℃/W)
    0.48
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz17.933.06.4–38.7
2140 MHz18.133.06.4–38.2
2170 MHz18.333.46.3–37.2
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 100 Watts CW