MRF8HP21130H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.1
  • P1dB (Typ) (W)
    130
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    28.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.0 @ 2170
  • Efficiency (Typ) (%)
    45.1
  • Thermal Resistance (Spec) (℃/W)
    0.6
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz14.246.47.9–35.4
2140 MHz14.145.77.7–35.3
2170 MHz14.045.17.6–34.8
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 166 Watts CW