MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Key Parametrics
-
- Frequency (Min) (MHz)
- 2110
-
- Frequency (Max) (MHz)
- 2170
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 50.3
-
- P1dB (Typ) (W)
- 107
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 28.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 17.6 @ 2170
-
- Efficiency (Typ) (%)
- 34
-
- Thermal Resistance (Spec) (℃/W)
- 0.53
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 17.4 | 34.6 | 6.4 | –37.5 |
| 2140 MHz | 17.5 | 34.1 | 6.5 | –38.0 |
| 2170 MHz | 17.6 | 34.0 | 6.4 | –37.6 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW