A2T21S160-12S: 2110-2170 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2L2L Package Image

NI-780S-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.5
  • P1dB (Typ) (W)
    140
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    38.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.4 @ 2170
  • Efficiency (Typ) (%)
    32.9
  • Thermal Resistance (Spec) (℃/W)
    0.3
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 600 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz18.233.66.8–33.4–18
2140 MHz18.333.06.7–33.3–15
2170 MHz18.432.96.7–33.0–13