AFT21S232S: 2110-2170 MHz, 50 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Overview

The AFT21S232SR3 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

NI-780S-2 Package Image

NI-780S-2 Package Image

NI-780S-2 Package Image

NI-780S-2 Package Image

NI-780S-2 Package Image

Key Parametrics

Frequency (Min) (MHz)

2110
Frequency (Max) (MHz)

2170
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

52.6
P1dB (Typ) (W)

182
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

50.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

16.7 @ 2110
Efficiency (Typ) (%)

30.5
Thermal Resistance (Spec) (℃/W)

0.43
Matching

input and output impedance matching
Class

AB
Die Technology

LDMOS

.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 1500 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2110 MHz	16.7	30.5	7.2	–35.7	–19
2140 MHz	17.0	31.0	7.1	–35.4	–20
2170 MHz	17.2	31.8	7.0	–34.8	–15

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