A3G20S350-01S: 2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-400S-2SA Package Image

NI-400S-2SA Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    56.1
  • P3dB (Typ) (W)
    410
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    59.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.1 @ 2170
  • Efficiency (Typ) (%)
    37
  • Thermal Resistance (Spec) (℃/W)
    0.64
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz18.037.07.0–33.3
2140 MHz18.036.97.0–33.3
2170 MHz18.137.06.9–32.3