A2T27S007N: 400-2700 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

DFN 4 x 6, 16-Lead

DFN 4 x 6, 16-Lead

Key Parametrics

  • Frequency (Min) (MHz)
    400
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    38.5
  • P1dB (Typ) (W)
    7
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    0.8 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.9 @ 2170
  • Efficiency (Typ) (%)
    19.6
  • Thermal Resistance (Spec) (℃/W)
    3.8
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ = 50 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz22.022.89.5–42.8–9
2140 MHz21.922.59.4–43.1–11
2170 MHz21.822.89.5–43.5–11
2200 MHz21.222.49.3–43.8–9

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 60 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz24.423.59.4–41.3–6
1840 MHz24.824.58.9–41.8–10
1880 MHz24.324.88.8–42.2–9
1. All data measured in fixture with device soldered to heatsink.