AFT27S012N: 728-2700 MHz, 1.26 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Overview

The AFT27S012NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Features

Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Universal broadband driven device with internal RF feedback
RoHS compliant

Features

Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Universal broadband driven device with internal RF feedback
RoHS compliant

Application Notes

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

Frequency (Min) (MHz)

728
Frequency (Max) (MHz)

2700
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

41.1
P1dB (Typ) (W)

13
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

1.26 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

22.8 @ 2170
Efficiency (Typ) (%)

20.9
Thermal Resistance (Spec) (℃/W)

1.3
Matching

unmatched
Class

AB
Die Technology

LDMOS

.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 90 mA, P_out = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2110 MHz	20.8	22.0	9.8	–41.1	–9
2140 MHz	20.9	22.6	9.6	–40.7	–10
2170 MHz	20.9	22.8	9.4	–40.8	–10
2200 MHz	20.8	22.9	9.3	–40.4	–9

1. All data measured in fixture with device soldered to heatsink.