AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (W)
    10
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1.26 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    21.7 @ 2170
  • Efficiency (Typ) (%)
    22.6
  • Thermal Resistance (Spec) (℃/W)
    3.5
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)1. All data measured in fixture with device soldered to heatsink.