MRF8P23160WH: 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2300
  • Frequency (Max) (MHz)
    2400
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    30.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.1 @ 2320
  • Efficiency (Typ) (%)
    36.5
  • Thermal Resistance (Spec) (℃/W)
    0.69
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

2300-2400 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 600 mA, VGSB = 1.2 Vdc, Pout = 30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz13.937.17.9–31.0
2350 MHz14.138.37.7–32.2
2400 MHz13.838.37.4–33.1
  • Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 190 Watts