AFT23S170-13S: 2300-2400 MHz 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-6 Image

NI-780S-6 Image

Key Parametrics

  • Frequency (Min) (MHz)
    2300
  • Frequency (Max) (MHz)
    2400
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.7
  • P1dB (Typ) (W)
    147
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    45.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.8 @ 2400
  • Efficiency (Typ) (%)
    33.9
  • Thermal Resistance (Spec) (℃/W)
    0.42
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.