AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast® RF Power LDMOS Transistors

Overview

Features

NI-780S-4L4S, NI-780GS-4L4L, NI-780S-4L4L Package Image

NI-780S-4L4S,  NI-780GS-4L4L,  NI-780S-4L4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    46.2
  • P1dB (Typ) (W)
    42
  • P3dB (Typ) (dBm)
    47.3
  • P3dB (Typ) (W)
    54
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    9.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.2 @ 2690
  • Efficiency (Typ) (%)
    47.1
  • Thermal Resistance (Spec) (℃/W)
    0.75
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.