A3G26H200W17S: 2496-2690 MHz, 34 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4S2S

NI-780S-4S2S

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    52.5
  • P3dB (Typ) (W)
    178
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    34.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.2 @ 2690
  • Efficiency (Typ) (%)
    54
  • Thermal Resistance (Spec) (℃/W)
    1.2
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 120 mA, VGSB = –5.3 Vdc, Pout = 34 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
 
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz14.754.28.1–29.3
2590 MHz14.855.57.9–30.9
2690 MHz14.254.07.8–34.1