A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast^® RF Power GaN Transistor

Overview

The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

MoreLess

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

Data Sheets

Application Notes

NI-780S-4L Package Image

NI-780S-4L Package Image

NI-780S-4L Package Image

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Key Parametrics

Frequency (Min) (MHz)

2496
Frequency (Max) (MHz)

2690
Supply Voltage (Typ) (V)

48
P3dB (Typ) (dBm)

54
P3dB (Typ) (W)

251
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

50.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

14.3 @ 2635
Efficiency (Typ) (%)

60.9
Thermal Resistance (Spec) (℃/W)

1
Matching

input impedance matching
Class

AB, C
Die Technology

GaN

RF Performance Table

2600 MHz

Typical Doherty single-carrier W-CDMA characterization performance: V_DD = 48 Vdc, I_DQA = 150 mA, V_GSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2575 MHz	14.3	61.9	7.2	–29.1
2605 MHz	14.3	61.7	7.1	–29.5
2635 MHz	14.3	60.9	6.8	–30.4

A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

RF Performance Table

2600 MHz

A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast^® RF Power GaN Transistor