MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET

Overview

Features

PLD 1.5 Package Image

PLD 1.5 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    36
  • P1dB (Typ) (W)
    4
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    4.0 @ PEP
  • Test Signal
    2-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 1960
  • Efficiency (Typ) (%)
    33
  • Thermal Resistance (Spec) (℃/W)
    8.8
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.