MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier

Overview

Features

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    1000
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    38.1
  • P1dB (Typ) (W)
    6.5
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    6.5 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    23.5 @ 900
  • Efficiency (Typ) (%)
    34
  • Thermal Resistance (Spec) (℃/W)
    3.2
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

100-900 MHz

Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA
Frequency Gps
(dB)
PAE
(%)
100 MHz @ 11 W CW23.555
400 MHz @ 9 W CW22.541
900 MHz @ 6.5 W CW23.534
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz
  • Typical Pout @ 1 dB Compression Point 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz